收藏本站
PolarP TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
V DSS
I D25
R DS(on)
=
=
≤
- 100V
- 52A
50 m Ω
TO-263 (I XTA )
TO-247 (IXTH)
TO-220 (I XTP )
Symbol
G
S
D (TAB)
Test Conditions
G
D
S
D (TAB)
Maximum Ratings
G
D S
D (TAB)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
-100
-100
± 20
V
V
V
TO-3P (IXTQ)
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
- 52
-130
V
A
A
G
D
S
D (TAB)
I AR
E AS
T C = 25 ° C
T C = 25 ° C
- 52
1.5
A
J
G = Gate
S = Source
D = Drain
TAB = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
M d
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-3P,TO-220,TO-247)
TO-247
TO-3P
TO-220
TO-263
10
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6.0
5.5
3.0
2.5
V/ns
W
° C
° C
° C
° C
° C
Nm/lb.in.
g
g
g
g
Features:
International standard packages
Fast intrinsic diode
Dynamic dV/dt Rated
Avalanche Rated
Rugged PolarP TM process
Low Q G and R ds(on) characterization
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Applications:
Hight side switching
Push-pull amplifiers
DC Choppers
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Current regulators
Automatic test equipment
BV DSS
V GS = 0V, I D = - 250 μ A
-100
V
Advantages:
V GS(th)
V DS = V GS , I D = - 250 μ A
- 2.5
- 4.5
V
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
Low gate charge results in simple
drive requirement
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = -10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
-10 μ A
-150 μ A
50 m Ω
Improved Gate, Avalanche and
dynamic dV/dt ruggedness
High power density
Fast switching
Easy to parallel
? 2008 IXYS CORPORATION, All rights reserved
DS99912A(5/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTH5N100A MOSFET N-CH 1000V 5A TO247AD
IXTH60N10 MOSFET N-CH 100V 60A TO-247
IXTH60N15 MOSFET N-CH 150V 60A TO-247
IXTH60N25 MOSFET N-CH 250V 60A TO-247
IXTH6N100D2 MOSFET N-CH 1000V 6A TO247
IXTH6N120 MOSFET N-CH 1200V 6A TO-247AD
IXTH6N150 MOSFET N-CH 1500V 6A TO-247
IXTH6N80A MOSFET N-CH 800V 6A TO-247
相关代理商/技术参数
IXTH54N30T 功能描述:MOSFET 54 Amps 300V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH56N15T 功能描述:MOSFET 56 Amps 150V 36 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH5N100 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Standard Power MOSFET
IXTH5N100A 功能描述:MOSFET 5 Amps 1000V 2 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH5N95 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
IXTH5N95A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
IXTH60N10 功能描述:MOSFET 60 Amps 100 V 0.033 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH60N15 功能描述:MOSFET 60 Amps 150V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube